2SC2655 NPN Transistor
EGP7.00
Tax included
2SC2655 NPN Transistor Silicon Epitaxial Type (PCT Process)
Power Amplifier Applications
Power Switching Applications
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1020 C2655 A1020 2SA1020
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2SC2655 NPN Transistor Silicon Epitaxial Type (PCT Process)
Power Amplifier Applications
Power Switching Applications
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1020 C2655 A1020 2SA1020